| PART |
Description |
Maker |
| IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit)
64K x 16 Static RAM
Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
SRAM
INTEGRATED DEVICE TECHNOLOGY INC
|
| M7010R-083ZA1T M7010R M7010R-066ZA1T 7658 |
From old datasheet system
16K x 68-bit Entry NETWORK SEARCH ENGINE
|
STMICROELECTRONICS[STMicroelectronics]
|
| M7040N M7040N-083ZA1T M7040N-066ZA1T -M7040N-083ZA |
64K x 72-bit Entry NETWORK PACKET SEARCH ENGINE
CAP 0.01PF 50V 10% X7R AXIAL BULK P-MIL-PRF-39014 64K的72位的网络数据包进入搜索引
CAP 5600PF 100V 10% X7R AXIAL BULK P-MIL-PRF-39014 64K的72位的网络数据包进入搜索引
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28
64K X 8 OTPROM, 90 ns, PDIP28
64K X 8 UVPROM, 55 ns, CDIP28
64K X 8 UVPROM, 90 ns, CDIP28
64K X 8 UVPROM, 70 ns, CDIP28
IC 集成电路
512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
ADVANCED MICRO DEVICES INC
SPANSION LLC
Rochester Electronics, LLC
AMD
|
| KM41464A KM41464A-12 KM41464A-15 KM41464AJ KM41464 |
64K x 4-Bit DRAM
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE 64K的4位动态内存页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX27L512PC-15 MX27L512TI-20 MX27L512TI-12 MX27L512 |
512K-BIT [64K x 8] CMOS EPROM 64K X 8 OTPROM, 120 ns, PDIP28
|
Macronix International Co., Ltd.
|
| KM64258E |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CTX8-1A-R CTX0.47-1-R CTX0.47-2-R CTX0.47-2P-R CTX |
ECONO-PAC?OCTA-PAC? OCTA-PAC? PLUS
Power Inductors and Transformers
Surface mount magnetics that can be used as singleor coupled inductors or 1:1 transformers that provide isolation between two windings
2 ELEMENT, 0.284 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
2 ELEMENT, 0.6 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Cooper Bussmann, Inc.
COOPER INDUSTRIES
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| CAT28HT64D-20 CAT28HT64D-15 CAT28HT64 |
64K-Bit CMOS Parallel EEPROM(5V,快速，低功耗，64K位（8K x 8位）并行CMOS EEPROM) 64K的位CMOS并行的EEPROMV的，快速，低功耗，64K的位K的8位）并行的CMOS EEPROM的）
64K-Bit CMOS PARALLEL E2PROM
|
Catalyst Semiconductor
|
| CS422YTA CSC11B011K00FPA CSC06B01390RGPA CSC09A011 |
CS Ceramic Sandwich, Single-In-Line Thin Film Resistor, Through Hole Network (Low Profile 0.20 Custom)
Array/Network Resistor, RES NET,THICK FILM,1K OHMS,100WV,1% /-TOL,-100,100PPM TC
Array/Network Resistor, RESISTOR, NETWORK, FILM, BUSSED, 1 W, THROUGH HOLE MOUNT, SIP
Array/Network Resistor, RESISTOR, NETWORK, FILM, BUSSED, 1.12 W, THROUGH HOLE MOUNT, SIP
Array/Network Resistor, RESISTOR, NETWORK, FILM, BUSSED, 0.87 W, THROUGH HOLE MOUNT, SIP
|
Vishay Dale
|
| AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
